? semiconductor components industries, llc, 2006 february, 2006 ? rev. 10 1 publication order number: BUV21/d BUV21 switchmode series npn silicon power transistor this device is designed for high speed, high current, high power applications. features ? high dc current gain: h fe min = 20 at i c = 12 a ? low v ce(sat) , v ce(sat) max = 0.6 v at i c = 8 a ? very fast switching times: tf max = 0.4 s at i c = 25 a ? pb?free package is available* maximum ratings rating symbol value unit collector?emitter voltage v ceo(sus) 200 vdc collector?base voltage v cbo 250 vdc emitter?base voltage v ebo 7 vdc collector?emitter voltage (v be = ?1.5 v) v cex 250 vdc collector?emitter voltage (r be = 100 ) v cer 240 vdc collector?current ? continuous ? peak (pw 10 ms) i c i cm 40 50 adc apk base?current continuous i b 8 adc total device dissipation @ t c = 25 c p d 250 w operating and storage junction temperature range t j , t stg ?65 to 200 c thermal characteristics characteristics symbol max unit thermal resistance, junction?to?case jc 0.7 c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 40 amperes npn silicon power metal transistor 200 volts ? 250 watts http://onsemi.com marking diagram device package shipping ordering information BUV21 to?204 100 units / tray BUV21g to?204 (pb?free) 100 units / tray BUV21g ayww mex to?204ae (to?3) case 197a BUV21 = device code g = pb?free package a = assembly location y = year ww = work week mex = country of origin
BUV21 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? ?????????????????????? ?????????????????????? ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? (note 1) ?????????????????????? ?????????????????????? ????? ????? ??? ??? ???? ???? ??? ??? ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current at reverse bias: (v ce = 250 v, v be = ?1.5 v)(t c = 25 c unless otherwise noted) (v ce = 250 v, v be = ?1.5 v, t c = 125 c) ????? ? ??? ? ? ??? ? ????? i cex ??? ? ? ? ? ? ? ??? ???? ? ?? ? ? ?? ? ???? 3.0 12.0 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector?emitter cutoff current (v ce = 160 v) ????? ? ??? ? ????? i ceo ??? ? ? ? ??? ???? ? ?? ? ???? 3.0 ??? ? ? ? ??? madc ?????????????????????? ?????????????????????? ????? ????? ??? ??? ???? ???? ??? ??? ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter?cutoff current (v eb = 5 v) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? second breakdown ?????????????????????? ? ???????????????????? ? ?????????????????????? second breakdown collector current with base forward biased (v ce = 20 v, t = 1 s) (v ce = 140 v, t = 1 s) ????? ? ??? ? ????? i s/b ??? ? ? ? ??? 12 0.15 ???? ? ?? ? ???? ??? ? ? ? ??? adc ????????????????????????????????? ????????????????????????????????? on characteristics (note 1) ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 12 a, v ce = 2 v) (i c = 25 a, v ce = 4 v) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 20 10 ???? ? ?? ? ? ?? ? ???? 60 ??? ? ? ? ? ? ? ??? ?????????????????????? ? ???????????????????? ? ?????????????????????? collector?emitter saturation voltage (i c = 12 a, i b = 1.2 a) (i c = 25 a, i b = 3 a) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? ???? ? ?? ? ???? 0.6 1.5 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? base?emitter saturation voltage (i c = 25 a, i b = 3 a) ????? ? ??? ? ????? v be(sat) ??? ? ? ? ??? ???? ? ?? ? ???? 1.5 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? current gain ? bandwidth product (v ce = 15 v, i c = 2 a, f = 4 mhz) ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? switching characteristics (resistive load) ????????? ????????? ?????????????? ? ???????????? ? ? ???????????? ? ?????????????? (i c = 25 a, i b1 = i b2 = 3 a, v cc = 100 v, r c = 4 ) ????? ????? ??? ??? ???? ???? ??? ? ? ? ? ? ? ??? s ????????? ????????? ????? ????? ??? ??? ???? ???? ????????? ????????? ????? ????? ??? ??? ???? ???? 300 s, duty cycle 2%. figure 1. power derating 1.0 0 t c , temperature ( c) 40 80 160 200 0.4 0.8 0.6 0.2 120 derating factor
BUV21 http://onsemi.com 3 i c , collector current (a) figure 2. active region safe operating area 40 1 v ce , collector?emitter voltage (v) 10 200 10 1 0.1 100 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 2 is based on t c = 25 c, t j(pk) is variable depending on power level. second breakdown limitations do not derate the same as thermal limitations. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. figure 3. ?on? voltages figure 4. dc current gain 50 100 i c , collector current (a) 110 40 0 30 20 10 v ce = 5 v figure 5. resistive switching performance 3.0 0 5 10 15 25 v ce = 100 v i c /i b1 = 8 i b1 = i b2 t, time (s) 2.0 1.0 t s 0.4 0.3 0.2 20 t on t f 2.0 i c , collector current (a) 110 1.6 i c /i b = 8 0.8 1.2 0.4 figure 6. switching times test circuit v, voltage (v) i c , collector current (a) v be v ce v cc i b2 i b1 r b r c r c ? r b : non inductive resistances v cc = 100 v r c =4 r b = 2.2 10,000 f 0
BUV21 http://onsemi.com 4 package dimensions to?204 (to?3) case 197a?05 issue k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim min max min max millimeters inches a 1.530 ref 38.86 ref b 0.990 1.050 25.15 26.67 c 0.250 0.335 6.35 8.51 d 0.057 0.063 1.45 1.60 e 0.060 0.070 1.53 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n 0.760 0.830 19.31 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k ?t? seating plane 2 pl d m q m 0.30 (0.012) y m t m y m 0.25 (0.010) t ?q? ?y? 2 1 l g b v h u on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 BUV21/d switchmode is a trademark of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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